Prof. Chein-Chun ChenTaiwan
Department of Engineering and System Science, Nation Tsing Hua University
| to present | | Associate Professor – National Tsing Hua University, Taiwan |
| - | | Ph.D., Physics – University of California, Los Angeles |
| - | | Project Leader, Taiwan’s Ångström Semiconductor Initiative Project |
| - | | Associate Professor (Joint), College of Semiconductor Research, NTHU |
Atomic electron tomography (STEM), Coherent X-ray diffraction imaging (synchrotron & XFEL), 3D reconstruction techniques, Phase retrieval & imaging algorithms, Electron ptychography (4D-STEM)
A physicist specializing in atomic electron tomography and coherent X-ray imaging, with extensive expertise across advanced imaging theory and experiment. He leads Taiwan’s Ångström Semiconductor Initiative, translating atomic-scale imaging into post-2-nm semiconductor metrology validated at TSMC, and plays a key integrative role in electron ptychography, bridging algorithms, facilities, and industry.
Beyond Hardware Limits: Sub-Å Electron Ptychography and the Future of Three-Dimensional Atomic Imaging
TBA TBA
Advanced Analytical Technology/TBA
Advancing semiconductor technologies beyond the 2-nm node demands metrology solutions capable of resolving three-dimensional (3D) atomic structures, buried interfaces, and subtle defects with both high fidelity and practical throughput. In this invited talk, I will present a unified computational imaging framework that integrates atomic electron tomography (AET), electron ptychography, and atom probe tomography (APT) to address these challenges and extend imaging performance beyond conventional hardware limits. AET enables direct 3D reconstruction of atomic structures by overcoming key limitations such as interpolation errors and the missing-wedge problem, and has been successfully deployed in collaboration with TSMC for failure analysis (FA) in 2-nm technology nodes, providing reliable identification of atomic-scale defects and interfaces.
In parallel, we have established Taiwan’s first 4D-STEM platform to realize electron ptychography with sub-ångström resolution, achieving simultaneous high speed, large field-of-view, and high-resolution imaging. Finally, I will discuss the integration of APT with electron tomography to enable correlative 3D characterization, combining atomic structural information with chemical sensitivity. Together, these advances establish an industry-first capability for atomic-scale 3D metrology and define a practical pathway for next-generation semiconductor inspection and process control.