Prof. Shien-Ping FengHong Kong
City University of Hong Kong
Current Position
2022 to presentProfessor, Systems Engineering
2022 to presentAssociate Dean (Industry Engagement), College of Engineering
Academic Experiences
2017 - 2022Associate Professor, Mechanical Engineering, The University of Hong Kong
2011 - 2017Assistant Professor, Mechanical Engineering, The University of Hong Kong
2009 - 2011Postdoctoral Associate, Mechanical Engineering, Massachusetts Institute of Technology (MIT)
Past Professional Experiences
2008 - 2009Deputy Director, Hsinchu R&D Center, Tripod Technology Corporation, Taiwan
2001 - 2008Engineer/Principal Engineer/Manager/Technical Manager, Taiwan Semiconductor Manufacturing Company (TSMC)
Honors and Awards
Specialty & Expertise
Heat to Electricity Conversion, Solar and Indoor Photovoltaics, Semiconductor Manufacturing
Others

Grain Engineering of Electroplated Copper for Advanced Electronic Packaging Applications


TBA TBA Lead-Free Soldering and Interconnect/TBA

​​​We have developed effective additives for producing nanocrystalline copper with uniform grain size and low impurity levels. These additives promote rapid grain growth, enabling copper–copper bonding at low temperatures. This combination of low thermal budget and excellent bonding quality provides a pathway for fast, low‑temperature bonding processes suitable for advanced electronics and heterogeneous 3DIC packaging applications, effectively reducing thermal impact on components. In addition, we have developed metastable copper, which features a nanocrystalline structure with approximately 10% nanotwins. It maintains structural stability at room temperature, yet the copper grains can rapidly grow above 200 °C, enabling fast, low‑temperature bonding. We have also developed structurally stable copper, a material composed of 50% fine grains and 50% nanotwins. It exhibits outstanding physical and chemical stability, offering corrosion resistance and the ability to withstand higher current densities. This material is suitable for finer redistribution layers (RDL) and can extend electromigration (EM) lifetime.​

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