Prof. Lain-Jong LiTaiwan
National University of Singapore
| 2024/11 to present | | National University of Singapore |
| 2023/12 - now | | Associate Editor of Nano Letters |
| 2017/12 - 2020/12 | | Director of Corporate Research (TSMC) |
2D materials; Electronics
Dr Lance Li is currently a Distinguished Professor in the Department of Materials Science at the National University of Singapore. He is also awarded as NRF Professor. He has held prominent positions such as Chair Professor of Future Electronics in the Department of Mechanical Engineering at The University of Hong Kong, as well as Director of the Corporate Research at Taiwan Semiconductor Manufacturing Company (TSMC). He is a Fellow of the Royal Society of Chemistry and serves as an Associate Editor of Nano Letters for the American Chemical Society.
MoS₂ and WSe₂ Transistors for Ultra-Low-Power Beyond-Silicon Electronics
TBA TBA
2D Materials/TBA
Two-dimensional (2D) semiconductors, such as MoS₂ and WSe₂, are emerging as strong candidates for extending transistor scaling beyond silicon, owing to their atomically thin body, excellent electrostatic control, and suppressed short-channel effects. In this talk, I will first discuss the key advantages of these materials for transistor scaling and briefly highlight recent progress in wafer-scale growth of high-quality 2D semiconductors.
Building on this, I will present our recent results on dual-gate MoS₂ nanosheet FETs, where strong electrostatic control and sub-1 nm capacitance equivalent thickness enable record-high drive current exceeding 2 mA/μm at scaled channel lengths. I will then address a key bottleneck in 2D electronics—dielectric integration—and show how wafer-scale, single-crystal high-κ dielectrics enable pristine interfaces, near-ideal subthreshold swing, and symmetric n/p device characteristics. This integration further enables vertically stacked complementary FETs (CFETs) operating at ultra-low supply voltages with low static power, providing a pathway toward energy-efficient logic.
Finally, I will extend these concepts to memory applications, highlighting all-2D-transistor-driven architectures, including 2T0C gain-cell DRAM and RRAM in a monolithic 3D platform. Together, these results outline a roadmap from materials and devices to circuits and systems, positioning 2D semiconductors as a compelling platform for ultra-low-power, beyond-Si computing.