Prof. Takayoshi KataseJapan
Institute of Science Tokyo
| 2025/10 to present | | Professor, Materials and Structures Laboratory, Institute of Science Tokyo |
| 2009/4 - 2012/3 | | Ph.D. in Engineering, Tokyo Institute of Technology |
| 2007/9 - 2009/3 | | M.Eng., Tokyo Institute of Technology |
| 2003/4 - 2007/3 | | B.Eng., Tokyo Institute of Technology |
| 2017/4 - 2025/9 | | Associate Professor, Materials and Structures Laboratory, Tokyo Institute of Technology |
| 2013/4 - 2017/3 | | Assistant Professor, Research Institute for Electronic Science, Hokkaido University |
| 2012/4 - 2013/3 | | Postdoctoral Fellow, Frontier Research Center, Tokyo Institute of Technology |
Inorganic materials, solid-state chemistry, thin-film growth, semiconductor, Thermal transport
https://researchmap.jp/katase?lang=en
Materials Design for Phonon Transport Control in Thermoelectrics and Thermal Management
TBA TBA
Japan-Taiwan Joint-Session on Materials and Structures/TBA
Heat management has become a critical issue in modern society. A large fraction of primary energy is lost as waste heat, and its reduction and effective utilization are strongly desired. Thermoelectric conversion is a promising technology for waste heat recovery; however, many state-of-the-art thermoelectric materials contain toxic and scarce elements, which poses a challenge for large-scale applications. In addition, the increasing power density associated with the miniaturization and integration of electronic devices generates excessive heat, creating a strong demand for advanced heat management technologies. In this talk, I will present our work on materials design based on phonon transport control, focusing on environmentally benign thermoelectric materials, heat-dissipating thin-film materials, and thermal switching materials. First, we introduce new design routes for enhancing phonon scattering and improving the thermoelectric figure of merit (ZT) in transition-metal oxides, including hydride anion (H-) substitution in SrTiO3 [Adv. Funct. Mater. 33, 2305819 (2023)] and the recent discovery of high ZT (~2.1) in inverse-perovskite Ba3SiO without using toxic elements [Adv. Sci. 11, 2307058 (2024)]. We also present additional new thermoelectric materials at the conference. Second, we identify oxide materials that maintain high thermal conductivity even at small grain sizes using first-principles anharmonic phonon calculations. Based on this design principle, we realized thin-film materials exhibiting high thermal conductivity deposited at a low temperatures, demonstrating their potential for heat-dissipation layers in electronic devices. Finally, we demonstrate thermal conductivity modulation in (Sn1-xPbx)Se, which exhibits reversible structural transitions between two-dimensional and three-dimensional crystal structures by temperature. This reversible structural change enables switching between thermal insulation and heat dissipation states, providing a new approach to dynamic thermal control (Adv. Electron. Mater. 8, 220024 (2022)).